● High resistivity buffer and low leakage current
● AlGaN based heterostructures
● High electron mobility
● Bow X/Y:< 40μm
● On 50,100,150 Si sub.
● Excellent Uniformity
● Crystal quality
● Layer thickness
● Al Composition
● RF HEMTs for microwave applications
RF Power GaN-on-Si wafer
The HGRF product family is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. SPS offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier without an AlN spacer layer and the other one having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request.
The epitaxial layer consists of an active heterostructure based on an AlGaN layer and a GaN channel, providing high electron mobility and low sheet resistivity.
The proprietary high-voltage buffer design offers low leakage currents, high breakdown voltage, low dispersion and a consistently low wafer bow.
Standard Layer Specifications